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Wolfgang Windl

  • Professor, Materials Science Engineering
  • 491 Watts Hall
    2041 College Rd
    Columbus, OH 43210
  • 614-247-6900

About

Wolfgang Windl is a Professor in the Department of Materials Science and Engineering at The Ohio State University and works in the area of Computational Materials Science. Before joining OSU in 2001, he spent four years with Motorola, ending his tenure as Principal Staff Scientist in the Digital DNA Laboratories in Austin, TX, where he was working in the area of multiscale modeling of semiconductor processing. Previously, he held postdoctoral positions at Los Alamos National Laboratory with Art Voter and Arizona State University with Otto Sankey. He received his diploma and doctoral degree in physics from the University Regensburg, advised by Dieter Strauch. Among others, he received the first Fraunhofer-Bessel Research Award from the Humboldt Society in 2006; a 2004 Nanotechnology Industrial Impact Award from the Nano Science and Technology Institute; two Patent and Licensing Awards from Los Alamos National Laboratory in 1998 and 1999; three Lumley Research Awards from the College of Engineering at The Ohio State University; and the 2006 Mars Fontana Best Teacher Award of the Department of Materials Science and Engineering at the Ohio State University.

Honors

  • 2012

    College of Engineering Lumley Research Award. .

  • 2006

    Fraunhofer-Bessel Research Award.

  • 2006

    Mars Fontana Teaching Award. .

  • 2004

    Nano Technology Industrial Impact Award.

Chapters

2007

  • Biggerstaff, T. L.; McClellan, R. D.; Lelis, A.; Zheleva, T.; Haney, S.; Agarwal, A.; Windl, W.; Sanwu Wang; Duscher, G.. 2007. In International Semiconductor Device Research Symposium,
  • Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Lirong Pei; Duscher, G.; Windl, W.. 2007. In ESSDERC 2007. Proceedings of the 37th European Solid-State Device Research Conference,
  • Steen, C.; Pichler, P.; Ryssel, H.; Lirong Pei; Duscher, G.; Werner, M.; van den Berg, J. A.; Windl, W.. 2007. In Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II,

2006

  • Windl, W.; Khorsandi, B.; Weiqi Luo; Blue, T. E.. 2006. In Materials in Extreme Environments. Symposium (Materials Research Society Symposium Proceedings Vol.929),

2004

  • Stoddard, N. G.; Duscher, G.; Windl, W.; Rozgonyi, G. A.. 2004. In Silicon Front-End Junction Formation-Physics and Technology (Materials Research Society Symposium Proceedings Vol.810),

2003

  • Tao Liang; Windl, W.; Lopatin, S.; Duscher, G.. 2003. In 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (Cat. No.03TH8679),

2002

  • Windl, W.. 2002. In 2002 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2002 (IEEE Cat. No.02TH8621),

2001

  • Windl, W.; Daw, M. S.; Carlson, N. N.; Laudon, M.. 2001. In Advances in Materials Theory and Modeling - Bridging Over Multiple-Length and Time Scales. Symposium (Materials Research Society Symposium Proceedings Vol.677),
  • Chun-Li Liu; Windl, W.; Borucki, L.; Shifeng Lu; Xiang-Yang Liu. 2001. In Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions III. Symposium (Materials Research Society Proceedings Vol.669),

1999

  • Windl, W.; Sankey, O. F.. 1999. In III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium,
  • Jianjun Dong; Sankey, O. F.; Demkov, A. A.; Ramachandran, G. K.; Gryko, J.; McMillan, P.; Windl, W.. 1999. In Thermoelectric Materials 1998 - Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications. Symposium,
  • Windl, W.; Bunea, M. M.; Stumpf, R.; Dunham, S. T.; Masquelier, M. P.. 1999. In Si Font-End Processing - Physics and Technology of Dopant-Defect Interactions. Symposium,
  • Windl, W.; Bunea, M.; Stumpf, R.; Dunham, S. T.; Masquelier, M. P.. 1999. In 1999 International Conference on Modeling and Simulation of Microsystems,

1998

  • Windl, W.; Demkov, A. A.. 1998. In Defect and Impurity Engineered Semiconductors II. Symposium,
  • Windl, W.; Lenosky, T. J.; Kress, J. D.; Voter, A. F.. 1998. In Semiconductor Process and Device Performance Modelling. Symposium,

1996

  • Karch, K.; Mayer, A. P.; Dietrich, T.; Lang, G.; Windl, W.; Pavone, P.; Strauch, D.; Bechstedt, F.. 1996. In 23rd International Conference on the Physics of Semiconductors,

Journal Articles

2014

  • Jiang,Shishi; Butler,Sheneve; Bianco,Elisabeth; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2014, "Improving the stability and optical properties of germanane via one-step covalent methyl-termination." NATURE COMMUNICATIONS 5, 3389 - 3389.
  • Restrepo,Oscar,D; Mishra,Rohan; Goldberger,Joshua,E; Windl,Wolfgang, 2014, "Tunable gaps and enhanced mobilities in strain-engineered silicane." JOURNAL OF APPLIED PHYSICS 115, no. 3, 033711 - 033711.
  • Jiang,Shishi; Butler,Sheneve; Bianco,Elisabeth; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2014, "Improving the stability and optical properties of germanane via one-step covalent methyl-termination.." Nature communications 5, 3389-? - 3389-?.

2013

  • Butler,Sheneve,Z; Hollen,Shawna,M; Cao,Linyou; Cui,Yi; Gupta,Jay,A; Gutiérrez,Humberto,R; Heinz,Tony,F; Hong,Seung,Sae; Huang,Jiaxing; Ismach,Ariel,F; Johnston-Halperin,Ezekiel; Kuno,Masaru; Plashnitsa,Vladimir,V; Robinson,Richard,D; Ruoff,Rodney,S; Salahuddin,Sayeef; Shan,Jie; Shi,Li; Spencer,Michael,G; Terrones,Mauricio; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Progress, challenges, and opportunities in two-dimensional materials beyond graphene.." ACS nano 7, no. 4, 2898-2926 - 2898-2926.
  • Ko,Dongkyun; Zhao,X,W; Reddy,Kongara,M; Restrepo,O,D; Mishra,R; Lemberger,T,R; Beloborodov,I,S; Trivedi,Nandini; Padture,Nitin,P; Windl,W; Yang,F,Y; Johnston-Halperin,E, 2013, "Defect states and disorder in charge transport in semiconductor nanowires." JOURNAL OF APPLIED PHYSICS 114, no. 4, 043711 - 043711.
  • Gohlke,David; Mishra,Rohan; Restrepo,Oscar,D; Lee,Donghun; Windl,Wolfgang; Gupta,Jay, 2013, "Atomic-scale engineering of the electrostatic landscape of semiconductor surfaces.." Nano letters 13, no. 6, 2418-2422 - 2418-2422.
  • Butler,Sheneve,Z; Hollen,Shawna,M; Cao,Linyou; Cui,Yi; Gupta,Jay,A; Gutierrez,Humberto,R; Heinz,Tony,F; Hong,Seung,Sae; Huang,Jiaxing; Ismach,Ariel,F; Johnston-Halperin,Ezekiel; Kuno,Masaru; Plashnitsa,Vladimir,V; Robinson,Richard,D; Ruoff,Rodney,S; Salahuddin,Sayeef; Shan,Jie; Shi,Li; Spencer,Michael,G; Terrones,Mauricio; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene." ACS NANO 7, no. 4, 2898-2926 - 2898-2926.
  • Gohlke,David; Mishra,Rohan; Restrepo,Oscar,D; Lee,Donghun; Windl,Wolfgang; Gupta,Jay, 2013, "Atomic-Scale Engineering of the Electrostatic Landscape of Semiconductor Surfaces." NANO LETTERS 13, no. 6, 2418-2422 - 2418-2422.
  • Hawn,David,P; Petrie,Christian,M; Blue,Thomas,E; Windl,Wolfgang, 2013, "In-situ gamma radiation induced attenuation in silica optical fibers heated up to 600 degrees C." JOURNAL OF NON-CRYSTALLINE SOLIDS 379, 192-200 - 192-200.
  • Agrawal,Anupriya; Mishra,Rohan; Ward,Logan; Flores,Katharine,M; Windl,Wolfgang, 2013, "An embedded atom method potential of beryllium." MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING 21, no. 8, 085001 - 085001.
  • Bianco,Elisabeth; Butler,Sheneve; Jiang,Shishi; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Stability and Exfoliation of Germanane: A Germanium Graphane Analogue." ACS NANO 7, no. 5, 4414-4421 - 4414-4421.
  • Bianco,Elisabeth; Butler,Sheneve; Jiang,Shishi; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Stability and exfoliation of germanane: a germanium graphane analogue.." ACS nano 7, no. 5, 4414-4421 - 4414-4421.
  • Morrow,Ryan; Mishra,Rohan; Restrepo,Oscar,D; Ball,Molly,R; Windl,Wolfgang; Wurmehl,Sabine; Stockert,Ulrike; Büchner,Bernd; Woodward,Patrick,M, 2013, "Independent ordering of two interpenetrating magnetic sublattices in the double perovskite Sr2CoOsO6.." Journal of the American Chemical Society 135, no. 50, 18824-18830 - 18824-18830.
  • 2013, "Independent Ordering of Two Interpenetrating Magnetic Sublattices in the Double Perovskite Sr2CoOsO6." JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 135, no. 50,

2012

  • Chisholm,Matthew,F; Duscher,Gerd; Windl,Wolfgang, 2012, "Oxidation Resistance of Reactive Atoms in Graphene." NANO LETTERS 12, no. 9, 4651-4655 - 4651-4655.
  • 2012, "Ca2MnRuO6: Magnetic Order Arising from Chemical Chaos." CHEMISTRY OF MATERIALS 24, no. 14,
  • Mishra,Rohan; Restrepo,Oscar,D; Kumar,Ashutosh; Windl,Wolfgang, 2012, "Native point defects in binary InP semiconductors." JOURNAL OF MATERIALS SCIENCE 47, no. 21, 7482-7497 - 7482-7497.
  • Uberuaga,Blas,P; Stuart,Steven,J; Windl,Wolfgang; Masquelier,Michael,P; Voter,Arthur,F, 2012, "Fullerene and graphene formation from carbon nanotube fragments." COMPUTATIONAL AND THEORETICAL CHEMISTRY 987, 115-121 - 115-121.
  • 2012, "Atomic-resolution defect contrast in low angle annular dark-field STEM." ULTRAMICROSCOPY 116,

2011

  • 2011, "First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures." APPLIED PHYSICS LETTERS 98, no. 23,
  • Drabold,David; Demkov,Alex; Lewis,James,P; Ortega,Jose; Windl,Wolfgang; Lindsay,Stuart, 2011, "Dedication." PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 248, no. 9, 1987-1988 - 1987-1988.
  • Nagpure,Shrikant,C; Babu,S,S; Bhushan,Bharat; Kumar,Ashutosh; Mishra,Rohan; Windl,Wolfgang; Kovarik,L; Mills,Michael, 2011, "Local electronic structure of LiFePO4 nanoparticles in aged Li-ion batteries." ACTA MATERIALIA 59, no. 18, 6917-6926 - 6917-6926.

2010

  • Santos, I; Castrillo, P; Windl, W; Drabold, DA; Pelaz, L; Marques, LA, 2010, "Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency." PHYSICAL REVIEW B 81, no. 3, 033203 - 033203.
  • 2010, "First-Principles Study of Defective and Nonstoichiometric Sr2FeMoO6." CHEMISTRY OF MATERIALS 22, no. 22,

2009

  • Heinen,R; Hackl,K; Windl,W; Wagner,MF,X, 2009, "Microstructural evolution during multiaxial deformation of pseudoelastic NiTi studied by first-principles-based micromechanical modeling." ACTA MATERIALIA 57, no. 13, 3856-3867 - 3856-3867.
  • Wagner,Martin,FX; Windl,Wolfgang, 2009, "Elastic anisotropy of Ni4Ti3 from first principles." SCRIPTA MATERIALIA 60, no. 4, 207-210 - 207-210.
  • Li,Dongsheng; Windl,Wolfgong; Padture,Nitin,P, 2009, "Toward Site-Specific Stamping of Graphene." ADVANCED MATERIALS 21, no. 12, 1243-? - 1243-?.
  • Luo, WQ; Windl, W, 2009, "First principles study of the structure and stability of carbynes." CARBON 47, no. 2, 367-383 - 367-383.
  • Li, DS; Windl, W; Padture, NP, 2009, "Toward Site-Specific Stamping of Graphene." ADVANCED MATERIALS 21, no. 12, 1243-+ - 1243-+.

2008

  • Steen,C; Martinez-Limia,A; Pichler,P; Ryssel,H; Paul,S; Lerch,W; Pei,L; Duscher,G; Severac,F; Cristiano,F; Windl,W, 2008, "Distribution and segregation of arsenic at the SiO2/Si interface." JOURNAL OF APPLIED PHYSICS 104, no. 2, 023518 - 023518.
  • Wagner,MF,X; Windl,W, 2008, "Lattice stability, elastic constants and macroscopic moduli of NiTi martensites from first principles." ACTA MATERIALIA 56, no. 20, 6232-6245 - 6232-6245.
  • Pei,Lirong; Duscher,Gerd; Steen,Christian; Pichler,Peter; Ssel,Heiner,R; Napolitani,Enrico; De Salvador,Davide; Piro,Alberto,Maria; Terrasi,A,Tonio; Severac,Fabrice; Cristiano,Filadelfo; Ravichandran,Karthik; Gupta,Naveen; Windl,Wolfgang, 2008, "Detailed arsenic concentration profiles at Si/SiO2 interfaces." JOURNAL OF APPLIED PHYSICS 104, no. 4, 043507 - 043507.
  • Cristianoa,Fuccio; Lauwers,Anne; Pichler,Peter; Feudel,Thomas; Windil,Wolfgang, 2008, "Special Issue: Front-End junction and Contact Formation in Future Silicon/Germanium Based Devices Preface." MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS 154, 1-2 - 1-2.
  • Windl,Wolfgang, 2008, "Concentration dependence of self-interstitial and boron diffusion in silicon." APPLIED PHYSICS LETTERS 92, no. 20, 202104 - 202104.

2007

  • Kim,Hansung; Windl,Wolfgang, 2007, "Efficient ab-initio calculation of the elastic properties of nanocrystalline silicon." JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE 4, no. 1, 65-70 - 65-70.
  • Kim,Hong,Jin; Windl,Wolfgang; Rigney,David, 2007, "Structure and chemical analysis of aluminum wear debris: Experiments and ab initio simulations." ACTA MATERIALIA 55, no. 19, 6489-6498 - 6489-6498.

2005

  • Stoddard,N; Duscher,G; Windl,W; Rozgonyi,G, 2005, "A new understanding of near-threshold damage for 200 keV irradiation in silicon." JOURNAL OF MATERIALS SCIENCE 40, no. 14, 3639-3650 - 3639-3650.
  • Stoddard,N; Pichler,P; Duscher,G; Windl,W, 2005, "Ab initio identification of the nitrogen diffusion mechanism in silicon." PHYSICAL REVIEW LETTERS 95, no. 2, 025901 - 025901.
  • Ravichandran,K; Windl,W, 2005, "Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si(100)/SiO2 interfaces." APPLIED PHYSICS LETTERS 86, no. 15, 152106 - 152106.

2004

  • Windl,Wolfgang; Liang,Tao; Lopatin,Sergei; Duscher,Gerd, 2004, "Investigation of Nanostructured Germanium/Silicon Dioxide Interfaces." JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE 1, no. 3, 288-297 - 288-297.

2002

  • Liu,C,L; Windl,W; Borucki,L; Lu,S,F; Liu,X,Y, 2002, "Ab initio modeling and experimental study of C-B interactions in Si." APPLIED PHYSICS LETTERS 80, no. 1, 52-54 - 52-54.

2001

  • Daw,M,S; Windl,W; Carlson,N,N; Laudon,M; Masquelier,M,P, 2001, "Effect of stress on dopant and defect diffusion in Si: A general treatment." PHYSICAL REVIEW B 64, no. 4, 045205 - 045205.
  • Windl,W; Laudon,M; Carlson,N,N; Daw,M,S, 2001, "Predictive process simulation and stress-mediated diffusion in silicon." COMPUTING IN SCIENCE & ENGINEERING 3, no. 4, 92-95 - 92-95.

2000

  • Liu,X,Y; Windl,W; Masquelier,M,P, 2000, "Ab initio modeling of boron clustering in silicon." APPLIED PHYSICS LETTERS 77, no. 13, 2018-2020 - 2018-2020.
  • Liu,X,Y; Windl,W; Masquelier,M,P, 2000, "Ab initio modeling of boron clustering in silicon (vol 77, pg 2018, 2000)." APPLIED PHYSICS LETTERS 77, no. 24, 4064-4064 - 4064-4064.

1999

  • Windl,W; Bunea,M,M; Stumpf,R; Dunham,S,T; Masquelier,M,P, 1999, "First-principles study of boron diffusion in silicon." PHYSICAL REVIEW LETTERS 83, no. 21, 4345-4348 - 4345-4348.

1996

  • Melendez-Lira, M.; Menendez, J.; Windl, W.; Sankey, O. F.; Spencer, G. S.; Sego, S.; Culbertson, R. B.; Bair, A. E.; Alford, T. L., 1996, "Carbon dependence of Raman mode frequencies in Si1-x-yGexCy alloys." Physical Review B (Condensed Matter) 54, no. 18, 12866-72 - 12866-72.

1995

  • Bauer,R; Schutt,O; Pavone,P; Windl,W; Strauch,D, 1995, "STATIC AND DYNAMICAL PROPERTIES OF SOLID CHLORINE." PHYSICAL REVIEW B 51, no. 1, 210-213 - 210-213.

1994

  • Karch,K; Pavone,P; Windl,W; Schutt,O; Strauch,D, 1994, "AB-INITIO CALCULATION OF STRUCTURAL AND LATTICE-DYNAMICAL PROPERTIES OF SILICON-CARBIDE." PHYSICAL REVIEW B 50, no. 23, 17054-17063 - 17054-17063.

Unknown

  • "Electron-Hole Pair Generation in SiC High-Temperature Alpha Particle Detectors."

Papers in Proceedings

2008

  • Windl, Wolfgang "Charge of Self-Interstitials and Boron-Interstitial Pairs as a Function of Doping Concentration." in Symposium on Doping Engineering for Front-End Processing held at the 2008 MRS Spring Meeting. (1 2008). 1070-E06 - 1070-E06.
  • Santos,Ivan; Windl,Wolfgang; Pelaz,Lourdes; Marques,Luis,Alberto "First Principles Study of Boron in Amorphous Silicon." in Symposium on Doping Engineering for Front-End Processing held at the 2008 MRS Spring Meeting. (1 2008). 223-228 - 223-228.
  • Gupta, Naveen; Windl, Wolfgang "Ab-Initio Modeling of Arsenic Segregation and Deactivation at the Si/SiO2 Interface." in Symposium on Doping Engineering for Front-End Processing held at the 2008 MRS Spring Meeting. (1 2008). 1070-E06 - 1070-E06.
  • Windl,Wolfgang; Stumpf,Roland "Charge of self-interstitials and boron-interstitial pairs as a function of doping concentration." JOURNAL: "MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS." in Symposium on Front-End Junction and Contact Formation in Future Silicon/Germanium based Devices held at the 2008 E-MRS Spring Meeting. (12 2008). 198-201 - 198-201.

2005

  • Ravichandran,K; Windl,W "Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (100)/SiO2 interfaces." JOURNAL: "MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY." in Symposium on Materials Science and Device Issues for Future Si-Based Technologies held at the 2005 EMRS Meeting. (12 2005). 359-362 - 359-362.

2004

  • Windl,W; Liang,T; Lopatin,S; Duscher,G "Modeling and characterization of atomically sharp "perfect" Ge/SiO2 interfaces." JOURNAL: "MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY." in Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineering held at the E-MRS 2004 Spring Meeting. (12 2004). 156-161 - 156-161.

2003

  • Windl,W "Multiscale simulation of diffusion, deactivation and segregation of boron in silicon." JOURNAL: "IEICE TRANSACTIONS ON ELECTRONICS." in International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002). (3 2003). 269-275 - 269-275.
  • Liang,T; Windl,W; Lopatin,S; Duscher,G "Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces." in IEEE International Conference on Simulation of Semiconductor Processes and Devices. (1 2003). 143 - 143.

2002

  • Beardmore,K,M; Windl,W; Haley,B,P; Gronbech-Jensen,N "Diffusion mechanisms and capture radii in silicon." in 2nd International Conference on Computational Nanoscience and Nanotechnology. (1 2002). 466 - 466.
  • Windl,W; Daw,M,S "Predictive process simulation and ab-initio calculation of the physical volume of electrons in silicon." in 2nd International Conference on Computational Nanoscience and Nanotechnology. (1 2002). 371 - 371.

1997

  • Windl,W; Kress,J,D; Voter,A,F; Menendez,J; Sankey,O,F "Influence of the local microstructure on the macroscopic properties of Si1-x-yGexCy alloys." in Symposium on Defects and Diffusion in Silicon Processing. (1 1997). 443-448 - 443-448.