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Wolfgang Windl

  • Professor, Materials Science Engineering
  • Professor, Physics
  • Smith Laboratories
    Room 5066
    Columbus, OH 43210
  • 614-247-6900

About

Wolfgang Windl is a Professor in the Department of Materials Science and Engineering at The Ohio State University and works in the area of Computational Materials Science. Before joining OSU in 2001, he spent four years with Motorola, ending his tenure as Principal Staff Scientist in the Digital DNA Laboratories in Austin, TX, where he was working in the area of multiscale modeling of semiconductor processing. Previously, he held postdoctoral positions at Los Alamos National Laboratory with Art Voter and Arizona State University with Otto Sankey. He received his diploma and doctoral degree in physics from the University Regensburg, advised by Dieter Strauch. Among others, he received the first Fraunhofer-Bessel Research Award from the Humboldt Society in 2006; a 2004 Nanotechnology Industrial Impact Award from the Nano Science and Technology Institute; two Patent and Licensing Awards from Los Alamos National Laboratory in 1998 and 1999; three Lumley Research Awards from the College of Engineering at The Ohio State University; and the 2006 Mars Fontana Best Teacher Award of the Department of Materials Science and Engineering at the Ohio State University.

 

Honors

  • May, 2012

    College of Engineering Lumley Research Award.

  • January, 2006

    Fraunhofer-Bessel Research Award.

  • January, 2006

    Mars Fontana Teaching Award.

  • January, 2004

    Nano Technology Industrial Impact Award.

Chapters

2007

  • 2007. In International Semiconductor Device Research Symposium,
  • 2007. In ESSDERC 2007. Proceedings of the 37th European Solid-State Device Research Conference,
  • 2007. In Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II,

2006

  • 2006. In Materials in Extreme Environments. Symposium (Materials Research Society Symposium Proceedings Vol.929),

2004

  • 2004. In Silicon Front-End Junction Formation-Physics and Technology (Materials Research Society Symposium Proceedings Vol.810),

2003

  • 2003. In 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (Cat. No.03TH8679),

2002

  • 2002. In 2002 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2002 (IEEE Cat. No.02TH8621),

2001

  • 2001. In Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions III. Symposium (Materials Research Society Proceedings Vol.669),
  • 2001. In Advances in Materials Theory and Modeling - Bridging Over Multiple-Length and Time Scales. Symposium (Materials Research Society Symposium Proceedings Vol.677),

1999

  • 1999. In Si Font-End Processing - Physics and Technology of Dopant-Defect Interactions. Symposium,
  • 1999. In III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium,
  • 1999. In 1999 International Conference on Modeling and Simulation of Microsystems,
  • 1999. In Thermoelectric Materials 1998 - Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications. Symposium,

1998

  • 1998. In Semiconductor Process and Device Performance Modelling. Symposium,
  • 1998. In Defect and Impurity Engineered Semiconductors II. Symposium,

1996

  • 1996. In 23rd International Conference on the Physics of Semiconductors,

Journal Articles

2018

  • Oberdorfer, C.; Withrow, T.; Yu, L.J.; Fisher, K. et al., 2018, "Influence of surface relaxation on solute atoms positioning within atom probe tomography reconstructions." Materials Characterization 146, 324-335 - 324-335.

2015

  • Agrawal, A.; Mishra, R.; Ward, L.; Flores, K.M. et al., 2015, "Corrigendum: An embedded atom method potential of beryllium (Modelling Simul. Mater. Sci. Eng. 21 085001)." Modelling and Simulation in Materials Science and Engineering 23, no. 6,
  • Garcia, T.R.; Reinke, B.; Windl, W.; Blue, T.E., 2015, "Alpha spectroscopy for in-situ liquid radioisotope measurements." Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 780, 119-126 - 119-126.

2014

  • Jiang,Shishi; Butler,Sheneve; Bianco,Elisabeth; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2014, "Improving the stability and optical properties of germanane via one-step covalent methyl-termination." NATURE COMMUNICATIONS 5, 3389 - 3389.
  • Cristiano, F.; Pichler, P.; Tavernier, C.; Windl, W., 2014, "Advanced Extra Functionality CMOS-based Devices." Physica Status Solidi (C) Current Topics in Solid State Physics 11, no. 1, 7-8 - 7-8.
  • Jiang,Shishi; Butler,Sheneve; Bianco,Elisabeth; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2014, "Improving the stability and optical properties of germanane via one-step covalent methyl-termination.." Nature communications 5, 3389-? - 3389-?.
  • Restrepo,Oscar,D; Mishra,Rohan; Goldberger,Joshua,E; Windl,Wolfgang, 2014, "Tunable gaps and enhanced mobilities in strain-engineered silicane." JOURNAL OF APPLIED PHYSICS 115, no. 3, 033711 - 033711.

2013

  • Ko,Dongkyun; Zhao,X,W; Reddy,Kongara,M; Restrepo,O,D; Mishra,R; Lemberger,T,R; Beloborodov,I,S; Trivedi,Nandini; Padture,Nitin,P; Windl,W; Yang,F,Y; Johnston-Halperin,E, 2013, "Defect states and disorder in charge transport in semiconductor nanowires." JOURNAL OF APPLIED PHYSICS 114, no. 4, 043711 - 043711.
  • Gohlke,David; Mishra,Rohan; Restrepo,Oscar,D; Lee,Donghun; Windl,Wolfgang; Gupta,Jay, 2013, "Atomic-Scale Engineering of the Electrostatic Landscape of Semiconductor Surfaces." NANO LETTERS 13, no. 6, 2418-2422 - 2418-2422.
  • Butler,Sheneve,Z; Hollen,Shawna,M; Cao,Linyou; Cui,Yi; Gupta,Jay,A; Gutiérrez,Humberto,R; Heinz,Tony,F; Hong,Seung,Sae; Huang,Jiaxing; Ismach,Ariel,F; Johnston-Halperin,Ezekiel; Kuno,Masaru; Plashnitsa,Vladimir,V; Robinson,Richard,D; Ruoff,Rodney,S; Salahuddin,Sayeef; Shan,Jie; Shi,Li; Spencer,Michael,G; Terrones,Mauricio; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Progress, challenges, and opportunities in two-dimensional materials beyond graphene.." ACS nano 7, no. 4, 2898-2926 - 2898-2926.
  • Morrow,Ryan; Mishra,Rohan; Restrepo,Oscar,D; Ball,Molly,R; Windl,Wolfgang; Wurmehl,Sabine; Stockert,Ulrike; Büchner,Bernd; Woodward,Patrick,M, 2013, "Independent ordering of two interpenetrating magnetic sublattices in the double perovskite Sr2CoOsO6.." Journal of the American Chemical Society 135, no. 50, 18824-18830 - 18824-18830.
  • Bianco,Elisabeth; Butler,Sheneve; Jiang,Shishi; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Stability and Exfoliation of Germanane: A Germanium Graphane Analogue." ACS NANO 7, no. 5, 4414-4421 - 4414-4421.
  • Bianco,Elisabeth; Butler,Sheneve; Jiang,Shishi; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Stability and exfoliation of germanane: a germanium graphane analogue.." ACS nano 7, no. 5, 4414-4421 - 4414-4421.
  • Butler,Sheneve,Z; Hollen,Shawna,M; Cao,Linyou; Cui,Yi; Gupta,Jay,A; Gutierrez,Humberto,R; Heinz,Tony,F; Hong,Seung,Sae; Huang,Jiaxing; Ismach,Ariel,F; Johnston-Halperin,Ezekiel; Kuno,Masaru; Plashnitsa,Vladimir,V; Robinson,Richard,D; Ruoff,Rodney,S; Salahuddin,Sayeef; Shan,Jie; Shi,Li; Spencer,Michael,G; Terrones,Mauricio; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene." ACS NANO 7, no. 4, 2898-2926 - 2898-2926.

2011

  • Nagpure,Shrikant,C; Babu,S,S; Bhushan,Bharat; Kumar,Ashutosh; Mishra,Rohan; Windl,Wolfgang; Kovarik,L; Mills,Michael, 2011, "Local electronic structure of LiFePO4 nanoparticles in aged Li-ion batteries." ACTA MATERIALIA 59, no. 18, 6917-6926 - 6917-6926.

2009

  • Li,Dongsheng; Windl,Wolfgong; Padture,Nitin,P, 2009, "Toward Site-Specific Stamping of Graphene." ADVANCED MATERIALS 21, no. 12, 1243-? - 1243-?.

2007

  • Kim,Hong,Jin; Windl,Wolfgang; Rigney,David, 2007, "Structure and chemical analysis of aluminum wear debris: Experiments and ab initio simulations." ACTA MATERIALIA 55, no. 19, 6489-6498 - 6489-6498.

2005

  • Liu, X.Y.; Windl, W., 2005, "Theoretical study of boron clustering in silicon." Journal of Computational Electronics 4, no. 3-4, 203-219 - 203-219.

2001

  • Windl, W.; Daw, M.S.; Carlson, N.N.; Laudon, M., 2001, "Multiscale modeling of stress-mediated diffusion in silicon - volume tensors." Materials Research Society Symposium - Proceedings 677, AA9.4.1-AA9.4.6 - AA9.4.1-AA9.4.6.
  • Windl, W.; Laudon, M.; Carlson, N.N.; Daw, M.S., 2001, "CSE in industry." Computing in Science and Engineering 3, no. 4, 92 - 92.
  • Daw, M.S.; Windl, W.; Carlson, N.N.; Laudon, M. et al., 2001, "Effect of stress on dopant and defect diffusion in Si: A general treatment." Physical Review B - Condensed Matter and Materials Physics 64, no. 4, 452051-4520510 - 452051-4520510.
  • Liu, C.L.; Windl, W.; Borucki, L.; Lu, S. et al., 2001, "Ab-initio modeling of C-B interactions in Si." Materials Research Society Symposium - Proceedings 669, J461-J466 - J461-J466.

1999

  • Dong, J.; Sankey, O.F.; Demkov, A.A.; Ramachandran, G.K. et al., 1999, "Theoretical calculation of the vibrational modes in Ge46 clathrate and related MxGayGe46-y type clathrates." Materials Research Society Symposium - Proceedings 545, 443-448 - 443-448.

1998

  • Collins, L.; Kress, J.; Kwon, I.; Windl, W. et al., 1998, "Quantum molecular dynamics simulations of dense matter." Journal of Computer-Aided Materials Design 5, no. 2-3, 173-191 - 173-191.

Unknown

  • Wang, Y.; Windl, W., "Native Point Defects in Boron Arsenide."

Papers in Proceedings

2017

  • Roth, P.C.; Shan, H.; Riegner, D.; Antolin, N. et al. "Performance analysis and optimization of the RAMPAGE metal alloy potential generation software." (10 2017).

2014

  • Liu, P.; Guo, J.; Liu, L.; Windl, W. et al. "Direct observation of defects in hexagonal boron nitride monolayers." (1 2014).

2013

  • Garcia, T.R.; Reinke, B.; Kumar, A.; Windl, W. et al. "Simulation and analytical form of the molten salt alpha-particle spectrum." (1 2013).
  • Reinke, B.; Garcia, T.; Wood, T.; Petrie, C. et al. "Temperature controlled cryostat for electrical and optical reactor irradiation experiments." (1 2013).

2012

  • Garcia, T.R.; Reinke, B.; Kumar, A.; Blue, T.E. et al. "Electrical characterization of high temperature SiC alpha-particle detectors for pyroprocessing." (12 2012).
  • Petrie, C.; Hawn, D.; Blue, T.E.; Windl, W. "In-situ performance of silica optical fibers heated to 1000°C." (12 2012).
  • Hawn, D.; Petrie, C.; Blue, T.E.; Windl, W. "In-situ performance of optical fibers heated to 600°C during gamma irradiation." (12 2012).
  • Garcia, T.R.; Reinke, B.; Kumar, A.; Zelaski, A. et al. "High temperature SiC alpha-particle detectors for pyroprocessing." (12 2012).

2011

  • Zelaski, A.; Garcia, T.R.; Kumar, A.; Blue, T.E. et al. "Development of 4H-SiC schottky diode detector for nuclear fuel reprocessing applications." (12 2011).
  • Garcia, T.R.; Blue, T.E.; Windl, W. "Computational alpha-particle spectroscopy using TCAD for pyroprocessing monitoring." (12 2011).
  • Kumar, A.; Restrepo, O.D.; Windl, W. "Ab-initio calculation of defect energetics and electronic structure in 4H-SiC." (12 2011).
  • Govindarajan, H.; Mishra, R.; Windl, W. "Atomic-scale modeling of the effects of irradiation on the optical properties of silica glass fibers." (12 2011).

2008

  • Windl, Wolfgang "Charge of Self-Interstitials and Boron-Interstitial Pairs as a Function of Doping Concentration." in Symposium on Doping Engineering for Front-End Processing held at the 2008 MRS Spring Meeting. (1 2008).
  • Gupta, N.; Windl, W. "Ab-initio modeling of arsenic pile-up and deactivation at the Si/SiO 2 interface." (12 2008).
  • Windl, W. "Ab-initio modeling of point defects, impurities and diffusion in silicon." (12 2008).
  • Luo, W.; Ravichandran, K.; Windl, W.; Fonseca, L.R.C. "Ab initio modeling of contact structure formation of Carbon nanotubes and its effect on electron transport." (12 2008).

2006

  • Windl, W. "Ab-initio calculations of the energetics and kinetics of defects and impurities in semiconductors." (12 2006).
  • Windl, W.; Liang, T.; Lopatin, S.; Duscher, G. "Characterization and modeling of atomically sharp "perfect" Si:Ge/SiO2 interfaces." (12 2006).
  • Windl, W.; Khorsandi, B.; Luo, W.; Blue, T.E. "111-116 SiC based neutron flux monitors for very high temperature nuclear reactors." (10 2006).

2005

  • Windl, W. "Energetics and kinetics of defects and impurities in silicon from atomistic calculations." (1 2005).

2003

  • Windl, W.; Liang, T.; Lopatin, S.; Duscher, G. "Atomistic modeling of the detailed structure of Si/SiO2 interfaces using AIDA-TEM (Ab-initio Interface Defect detection by Analytic Transmission Electron Microscopy)." (9 2003).
  • Lopatin, S.; Duscher, G.; Windl, W. "Atomic resolution Z-contrast imaging and EELS: Application for Ge/SiO 2 interface." (9 2003).

2002

  • Windl, W.; Daw, M.S. "Predictive process simulation and ab-initio calculation of the physical volume of electrons in silicon." (12 2002).
  • Beardmore, K.M.; Windl, W.; Haley, B.P.; Grønbech-Jensen, N. "Diffusion mechanisms and capture radii in silicon." (12 2002).

2001

  • Windl, W.; Daw, M.S.; Carlson, N.N.; Laudon, M. "Multiscale modeling of stress-mediated diffusion in silicon - volume tensors." (12 2001).
  • Uberuaga, B.P.; Henkelman, G.; Jónsson, H.; Dunham, S.T. et al. "Theoretical investigations of diffusion and clustering in semiconductors." (12 2001).
  • Daw, M.S.; Windl, W.; Laudon, M. "General treatment of the effect of stress on defect diffusion in Si." (12 2001).
  • Windl, W.; Liu, X.Y.; Masquelier, M.P. "Ab initio modeling of boron clustering in silicon." (12 2001).

1997

  • Windl, W.; Kress, J.D.; Voter, A.F.; Menendez, J. et al. "Influence of the local microstructure on the macroscopic properties of Si1-x-yGexCy alloys." (12 1997).