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Wolfgang Windl

  • Professor, Physics
  • Professor, Materials Science Engineering
  • MSE Graduate Studies Chair
  • Smith Laboratories
    Room 5066
    Columbus, OH 43210
  • 614-247-6900

About

Wolfgang Windl is a Professor in the Department of Materials Science and Engineering at The Ohio State University and works in the area of Computational Materials Science. Before joining OSU in 2001, he spent four years with Motorola, ending his tenure as Principal Staff Scientist in the Digital DNA Laboratories in Austin, TX, where he was working in the area of multiscale modeling of semiconductor processing. Previously, he held postdoctoral positions at Los Alamos National Laboratory with Art Voter and Arizona State University with Otto Sankey. He received his diploma and doctoral degree in physics from the University Regensburg, advised by Dieter Strauch. Among others, he received the first Fraunhofer-Bessel Research Award from the Humboldt Society in 2006; a 2004 Nanotechnology Industrial Impact Award from the Nano Science and Technology Institute; two Patent and Licensing Awards from Los Alamos National Laboratory in 1998 and 1999; three Lumley Research Awards from the College of Engineering at The Ohio State University; and the 2006 Mars Fontana Best Teacher Award of the Department of Materials Science and Engineering at the Ohio State University.

Honors

  • May, 2012

    College of Engineering Lumley Research Award.

  • January, 2006

    Fraunhofer-Bessel Research Award.

  • January, 2006

    Mars Fontana Teaching Award.

  • January, 2004

    Nano Technology Industrial Impact Award.

Chapters

2007

  • 2007. In International Semiconductor Device Research Symposium,
  • 2007. In ESSDERC 2007. Proceedings of the 37th European Solid-State Device Research Conference,
  • 2007. In Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II,

2006

  • 2006. In Materials in Extreme Environments. Symposium (Materials Research Society Symposium Proceedings Vol.929),

2004

  • 2004. In Silicon Front-End Junction Formation-Physics and Technology (Materials Research Society Symposium Proceedings Vol.810),

2003

  • 2003. In 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (Cat. No.03TH8679),

2002

  • 2002. In 2002 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2002 (IEEE Cat. No.02TH8621),

2001

  • 2001. In Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions III. Symposium (Materials Research Society Proceedings Vol.669),
  • 2001. In Advances in Materials Theory and Modeling - Bridging Over Multiple-Length and Time Scales. Symposium (Materials Research Society Symposium Proceedings Vol.677),

1999

  • 1999. In Si Font-End Processing - Physics and Technology of Dopant-Defect Interactions. Symposium,
  • 1999. In III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium,
  • 1999. In 1999 International Conference on Modeling and Simulation of Microsystems,
  • 1999. In Thermoelectric Materials 1998 - Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications. Symposium,

1998

  • 1998. In Semiconductor Process and Device Performance Modelling. Symposium,
  • 1998. In Defect and Impurity Engineered Semiconductors II. Symposium,

1996

  • 1996. In 23rd International Conference on the Physics of Semiconductors,

Journal Articles

2019

  • He, B.; Wang, Y.; Arguilla, M.Q.; Cultrara, N.D. et al., 2019, "The Fermi surface geometrical origin of axis-dependent conduction polarity in layered materials.." Nature materials 18, no. 6, 568-572 - 568-572.

2018

  • Oberdorfer, C.; Withrow, T.; Yu, L.J.; Fisher, K. et al., 2018, "Influence of surface relaxation on solute atoms positioning within atom probe tomography reconstructions." Materials Characterization 146, 324-335 - 324-335.
  • Cultrara, N.D.; Wang, Y.; Arguilla, M.Q.; Scudder, M.R. et al., 2018, "Synthesis of 1T, 2H, and 6R Germanane Polytypes." CHEMISTRY OF MATERIALS 30, no. 4, 1335-1343 - 1335-1343.
  • Amamou, W.; Pinchuk, I.V.; Trout, A.H.; Williams, R.E.A. et al., 2018, "Magnetic proximity effect in Pt/CoFe2O4 bilayers." PHYSICAL REVIEW MATERIALS 2, no. 1,

2016

  • McClure, E.T.; Ball, M.R.; Windl, W.; Woodward, P.M., 2016, "Cs2AgBiX6 (X = Br, CI): New Visible Light Absorbing, Lead-Free Halide Perovskite Semiconductors." CHEMISTRY OF MATERIALS 28, no. 5, 1348-1354 - 1348-1354.

2015

  • Kłosowski, M.M.; Friederichs, R.J.; Nichol, R.; Antolin, N. et al., 2015, "Probing carbonate in bone forming minerals on the nanometre scale.." Acta biomaterialia 20, 129-139 - 129-139.
  • Perkins, J.; Foster, G.M.; Myer, M.; Mehra, S. et al., 2015, "Impact of Mg content on native point defects in MgxZn1-xO (0." APL MATERIALS 3, no. 6,
  • Agrawal, A.; Mishra, R.; Ward, L.; Flores, K.M. et al., 2015, "Corrigendum: An embedded atom method potential of beryllium (Modelling Simul. Mater. Sci. Eng. 21 085001)." Modelling and Simulation in Materials Science and Engineering 23, no. 6,

2014

  • Hauser, A.J.; Lucy, J.M.; Gaultois, M.W.; Ball, M.R. et al., 2014, "Magnetic structure in epitaxially strained Sr2CrReO6 thin films by element-specific XAS and XMCD." PHYSICAL REVIEW B 89, no. 18,
  • Cristiano, F.; Pichler, P.; Tavernier, C.; Windl, W., 2014, "Advanced Extra Functionality CMOS-based Devices." Physica Status Solidi (C) Current Topics in Solid State Physics 11, no. 1, 7-8 - 7-8.
  • Jiang,Shishi; Butler,Sheneve; Bianco,Elisabeth; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2014, "Improving the stability and optical properties of germanane via one-step covalent methyl-termination." NATURE COMMUNICATIONS 5, 3389 - 3389.
  • Jiang,Shishi; Butler,Sheneve; Bianco,Elisabeth; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2014, "Improving the stability and optical properties of germanane via one-step covalent methyl-termination.." Nature communications 5, 3389-? - 3389-?.
  • Restrepo,Oscar,D; Mishra,Rohan; Goldberger,Joshua,E; Windl,Wolfgang, 2014, "Tunable gaps and enhanced mobilities in strain-engineered silicane." JOURNAL OF APPLIED PHYSICS 115, no. 3, 033711 - 033711.

2013

  • Ko, D.; Zhao, X.W.; Reddy, K.M.; Restrepo, O.D. et al., 2013, "Defect states and disorder in charge transport in semiconductor nanowires." JOURNAL OF APPLIED PHYSICS 114, no. 4,
  • Morrow,Ryan; Mishra,Rohan; Restrepo,Oscar,D; Ball,Molly,R; Windl,Wolfgang; Wurmehl,Sabine; Stockert,Ulrike; Büchner,Bernd; Woodward,Patrick,M, 2013, "Independent ordering of two interpenetrating magnetic sublattices in the double perovskite Sr2CoOsO6.." Journal of the American Chemical Society 135, no. 50, 18824-18830 - 18824-18830.
  • Gohlke,David; Mishra,Rohan; Restrepo,Oscar,D; Lee,Donghun; Windl,Wolfgang; Gupta,Jay, 2013, "Atomic-Scale Engineering of the Electrostatic Landscape of Semiconductor Surfaces." NANO LETTERS 13, no. 6, 2418-2422 - 2418-2422.
  • Butler,Sheneve,Z; Hollen,Shawna,M; Cao,Linyou; Cui,Yi; Gupta,Jay,A; Gutiérrez,Humberto,R; Heinz,Tony,F; Hong,Seung,Sae; Huang,Jiaxing; Ismach,Ariel,F; Johnston-Halperin,Ezekiel; Kuno,Masaru; Plashnitsa,Vladimir,V; Robinson,Richard,D; Ruoff,Rodney,S; Salahuddin,Sayeef; Shan,Jie; Shi,Li; Spencer,Michael,G; Terrones,Mauricio; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Progress, challenges, and opportunities in two-dimensional materials beyond graphene.." ACS nano 7, no. 4, 2898-2926 - 2898-2926.
  • Ko,Dongkyun; Zhao,X,W; Reddy,Kongara,M; Restrepo,O,D; Mishra,R; Lemberger,T,R; Beloborodov,I,S; Trivedi,Nandini; Padture,Nitin,P; Windl,W; Yang,F,Y; Johnston-Halperin,E, 2013, "Defect states and disorder in charge transport in semiconductor nanowires." JOURNAL OF APPLIED PHYSICS 114, no. 4, 043711 - 043711.
  • Bianco,Elisabeth; Butler,Sheneve; Jiang,Shishi; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Stability and Exfoliation of Germanane: A Germanium Graphane Analogue." ACS NANO 7, no. 5, 4414-4421 - 4414-4421.
  • Bianco,Elisabeth; Butler,Sheneve; Jiang,Shishi; Restrepo,Oscar,D; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Stability and exfoliation of germanane: a germanium graphane analogue.." ACS nano 7, no. 5, 4414-4421 - 4414-4421.
  • Butler,Sheneve,Z; Hollen,Shawna,M; Cao,Linyou; Cui,Yi; Gupta,Jay,A; Gutierrez,Humberto,R; Heinz,Tony,F; Hong,Seung,Sae; Huang,Jiaxing; Ismach,Ariel,F; Johnston-Halperin,Ezekiel; Kuno,Masaru; Plashnitsa,Vladimir,V; Robinson,Richard,D; Ruoff,Rodney,S; Salahuddin,Sayeef; Shan,Jie; Shi,Li; Spencer,Michael,G; Terrones,Mauricio; Windl,Wolfgang; Goldberger,Joshua,E, 2013, "Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene." ACS NANO 7, no. 4, 2898-2926 - 2898-2926.

2012

  • Antolin, N.; Restrepo, O.D.; Windl, W., 2012, "Fast free-energy calculations for unstable high-temperature phases." Physical Review B 86, no. 5,

2011

  • Nagpure,Shrikant,C; Babu,S,S; Bhushan,Bharat; Kumar,Ashutosh; Mishra,Rohan; Windl,Wolfgang; Kovarik,L; Mills,Michael, 2011, "Local electronic structure of LiFePO4 nanoparticles in aged Li-ion batteries." ACTA MATERIALIA 59, no. 18, 6917-6926 - 6917-6926.

2009

  • Li,Dongsheng; Windl,Wolfgong; Padture,Nitin,P, 2009, "Toward Site-Specific Stamping of Graphene." ADVANCED MATERIALS 21, no. 12, 1243-? - 1243-?.

2007

  • Kim,Hong,Jin; Windl,Wolfgang; Rigney,David, 2007, "Structure and chemical analysis of aluminum wear debris: Experiments and ab initio simulations." ACTA MATERIALIA 55, no. 19, 6489-6498 - 6489-6498.

2005

  • Liu, X.Y.; Windl, W., 2005, "Theoretical study of boron clustering in silicon." Journal of Computational Electronics 4, no. 3-4, 203-219 - 203-219.

2001

  • Windl, W.; Daw, M.S.; Carlson, N.N.; Laudon, M., 2001, "Multiscale modeling of stress-mediated diffusion in silicon - volume tensors." Materials Research Society Symposium - Proceedings 677, AA9.4.1-AA9.4.6 - AA9.4.1-AA9.4.6.
  • Daw, M.S.; Windl, W.; Carlson, N.N.; Laudon, M. et al., 2001, "Effect of stress on dopant and defect diffusion in Si: A general treatment." Physical Review B - Condensed Matter and Materials Physics 64, no. 4, 452051-4520510 - 452051-4520510.
  • Liu, C.L.; Windl, W.; Borucki, L.; Lu, S. et al., 2001, "Ab-initio modeling of C-B interactions in Si." Materials Research Society Symposium - Proceedings 669, J461-J466 - J461-J466.
  • Windl, W.; Laudon, M.; Carlson, N.N.; Daw, M.S., 2001, "CSE in industry." Computing in Science and Engineering 3, no. 4, 92 - 92.

1999

  • Dong, J.; Sankey, O.F.; Demkov, A.A.; Ramachandran, G.K. et al., 1999, "Theoretical calculation of the vibrational modes in Ge46 clathrate and related MxGayGe46-y type clathrates." Materials Research Society Symposium - Proceedings 545, 443-448 - 443-448.

1998

  • Collins, L.; Kress, J.; Kwon, I.; Windl, W. et al., 1998, "Quantum molecular dynamics simulations of dense matter." Journal of Computer-Aided Materials Design 5, no. 2-3, 173-191 - 173-191.

Unknown

  • Wang, Y.; Windl, W., "Native Point Defects and Evidence of Ultrahigh Thermal Conductivity in BAs."

Papers in Proceedings

2014

  • Liu, P.; Guo, J.; Liu, L.; Windl, W. et al. "Direct observation of defects in hexagonal boron nitride monolayers." (1 2014).

2013

  • Reinke, B.; Garcia, T.; Wood, T.; Petrie, C. et al. "Temperature controlled cryostat for electrical and optical reactor irradiation experiments." (1 2013).

2011

  • M. Eades, J. Flanders, N. McMurray, R.Denning, X. Sun, W. Windl, and T.E.Blue "Space Molten Salt Reactor Concept for Nuclear Electric Propulsion and Surface Power." in Proceedings of Nuclear and Emerging Technologies for Space 2011. (1 2011).
  • Eades, M.; Flanders, J.; Mcmurray, N.; Denning, R. et al. "Space molten salt reactor concept for nuclear electric propulsion and surface power." (6 2011).
  • Eades, M.; Flanders, J.; McMurray, N.; Denning, R. et al. "Space molten salt reactor concept for nuclear electric propulsion and surface power." (8 2011).
  • Govindarajan, H.; Mishra, R.; Windl, W. "Atomic-scale modeling of the effects of irradiation on the optical properties of silica glass fibers." (12 2011).
  • Kumar, A.; Restrepo, O.D.; Windl, W. "Ab-initio calculation of defect energetics and electronic structure in 4H-SiC." (12 2011).

2008

  • Luo, W.; Ravichandran, K.; Windl, W.; Fonseca, L.R.C. "Ab initio modeling of contact structure formation of Carbon nanotubes and its effect on electron transport." (12 2008).
  • Bharathula, A.; Luo, W.; Windl, W.; Flores, K.M. "Characterization of open volume regions in a simulated Cu-Zr metallic glass." (8 2008).
  • Gupta, N.; Windl, W. "Ab-Initio Modeling of Arsenic Pile-Up and Deactivation at the Si/SiO2 Interface." in Symposium on Doping Engineering for Front-End Processing held at the 2008 MRS Spring Meeting. (1 2008).
  • Bharathula, A.; Luo, W.; Windl, W.; Flores, K.M. "Characterization of open volume regions in a simulated Cu-Zr metallic glass." in 4th International Conference on Bulk Metallic Glasses. (8 2008).
  • Bharathula, A.; Luo, W.; Windl, W.; Flores, K.M. "Characterization of open volume regions in a simulated Cu-Zr metallic glass." (8 2008).
  • Windl, W. "Ab-initio modeling of point defects, impurities and diffusion in silicon." (12 2008).
  • Santos, I.; Windl, W.; Pelaz, L.; Marques, L.A. "First Principles Study of Boron in Amorphous Silicon." (1 2008).
  • Santos, I.; Windl, W.; Pelaz, L.; Marqués, L.A. "First principles study of boron in amorphous silicon." (12 2008).
  • Gupta, N.; Windl, W. "Ab-Initio Modeling of Arsenic Pile-Up and Deactivation at the Si/SiO2 Interface." (1 2008).
  • Gupta, Naveen; Windl, Wolfgang "Ab-Initio Modeling of Arsenic Segregation and Deactivation at the Si/SiO2 Interface." in Symposium on Doping Engineering for Front-End Processing held at the 2008 MRS Spring Meeting. (1 2008).
  • Santos,Ivan; Windl,Wolfgang; Pelaz,Lourdes; Marques,Luis,Alberto "First Principles Study of Boron in Amorphous Silicon." in Symposium on Doping Engineering for Front-End Processing held at the 2008 MRS Spring Meeting. (1 2008).
  • Gupta, N.; Windl, W. "Ab-initio modeling of arsenic pile-up and deactivation at the Si/SiO 2 interface." (12 2008).
  • Windl, Wolfgang "Charge of Self-Interstitials and Boron-Interstitial Pairs as a Function of Doping Concentration." in Symposium on Doping Engineering for Front-End Processing held at the 2008 MRS Spring Meeting. (1 2008).
  • Windl, W.; Stumpf, R. "Charge of self-interstitials and boron-interstitial pairs as a function of doping concentration." (12 2008).
  • Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H. et al. "Characterization of the pile-up of As at the SiO<inf>2</inf>/Si interface." (1 2008).
  • Windl,Wolfgang; Stumpf,Roland "Charge of self-interstitials and boron-interstitial pairs as a function of doping concentration." in Symposium on Front-End Junction and Contact Formation in Future Silicon/Germanium based Devices held at the 2008 E-MRS Spring Meeting. (12 2008).
  • Santos, I.; Windl, W.; Pelaz, L.; Marques, L.A. "First Principles Study of Boron in Amorphous Silicon." in Symposium on Doping Engineering for Front-End Processing held at the 2008 MRS Spring Meeting. (1 2008).
  • Windl, W.; Stumpf, R. "Charge of self-interstitials and boron-interstitial pairs as a function of doping concentration." in Symposium on Front-End Junction and Contact Formation in Future Silicon/Germanium based Devices held at the 2008 E-MRS Spring Meeting. (12 2008).
  • Windl, W.; Stumpf, R. "Charge of self-interstitials and boron-interstitial pairs as a function of doping concentration." (12 2008).

2007

  • Steen, C.; Pichler, P.; Ryssel, H.; Pei, L. et al. "Characterization of the segregation of arsenic at the interface SiO2/Si." in Symposium on Semiconductor Defect Engineering Materials, Synthetic Structures and Devices II held at the 2007 MRS Spring Meeting. (1 2007).
  • Kim, H.; Windl, W.; Choi, J.; Lee, J.K. et al. "Multiscale simulations of the elastic properties of polycrystalline silicon." in 9th International Conference on Numerical Methods in Industrial Forming Processes (NUMIFORM 07). (1 2007).
  • Martinez-Limia, A.; Steen, C.; Pichler, P.; Gupta, N. et al. "Diffusion and deactivation of As in Si: Combining atomistic and continuum simulation approaches." in 12th International Conference on Simulation of Semiconductor Processes and Devices. (1 2007).
  • Biggerstaff, T.L.; McClellan, R.D.; Lelis, A.; Zheleva, T. et al. "Characterization of the origin of band states in the SiC/SiO2 interface." in International Semiconductor Device Research Symposium. (1 2007).
  • Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H. et al. "Characterization of the pile-up of As at the SiO2/Si interface." in 37th European Solid-State Device Research Conference. (1 2007).
  • Kim, H.; Windl, W.; Choi, J.; Lee, J.K. et al. "Multiscale simulations of the elastic properties of polycrystalline silicon." (8 2007).
  • Martinez-Limia, A.; Steen, C.; Pichler, P.; Gupta, N. et al. "Diffusion and deactivation of As in Si: Combining atomistic and continuum simulation approaches." (1 2007).
  • Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H. et al. "Characterization of the pile-up of As at the SiO2/Si interface." (1 2007).
  • Biggerstaff, T.L.; McClellan, R.D.; Lelis, A.; Zheleva, T. et al. "Characterization of the origin of band states in the SiC/SiO2 Interface." (12 2007).
  • Kim, H.; Windl, W.; Choi, J.; Lee, J.K. et al. "Multiscale simulations of the elastic properties of polycrystalline silicon." (1 2007).
  • Steen, C.; Pichler, P.; Ryssel, H.; Pei, L. et al. "Characterization of the segregation of arsenic at the interface SiO2/Si." (1 2007).
  • B. Khorsandi, T. Blue, W. Windl, and J. Kulisek "TRIM Modeling of Displacement Damage in SiC for Monoenergetic Neutrons." in Reactor Dosimetry: 12th International Symposium. (1 2007).
  • B. Khorsandi, J. Chenkovich, T.E. Blue, W. Windl, J. Kulisek, D.W. Miller "Multiscale Modeling of Damage in SiC Detectors in GT-MHR Central Reflector." in Transactions of the ANS 2007 Annual Meeting. (6 2007).
  • Biggerstaff, T.L.; McClellan, R.D.; Lelis, A.; Zheleva, T. et al. "Characterization of the origin of band states in the SiC/SiO2 interface." (1 2007).
  • Martinez-Limia, A.; Steen, C.; Pichler, P.; Gupta, N. et al. "Diffusion and deactivation of As in Si: Combining atomistic and continuum simulation approaches." (1 2007).
  • Steen, C.; Pichler, P.; Ryssel, H.; Pei, L. et al. "Characterization of the segregation of arsenic at the interface SiO 2/Si." (12 2007).

2006

  • Windl, W. "Ab-initio calculations of the energetics and kinetics of defects and impurities in semiconductors." (12 2006).
  • B. Khorsandi, T.E. Blue, J. Kulisek, W. Windl, D. Miller "The Use of Monte Carlo Methods to Study the Creation and Evolution of Defects in SiC Detectors irradiated by Neutrons." in Transactions of the ANS 14th Biennial Topical Meeting of the RPSD. (4 2006).
  • Pichler, P.; Burenkov, A.; Lerch, W.; Lorenz, J. et al. "Process-induced diffusion phenomena in advanced CMOS technologies." in 2nd International Conference on Diffusion in Solids and Liquids. (1 2006).
  • Windl, W.; Luo, W. "PHYS 6-Very-low overhead ab initio accelerated dynamics." (9 2006).
  • W. Windl, B. Khorsandi, W. Luo, and T.E. Blue "SiC Based Neutron Flux Monitors for Very High Temperature Nuclear Reactors." in Mater. Res. Soc. Symp. Proc. 929, 0929-II03-04. (1 2006).
  • Windl, W.; Luo, W. "PHYS 6-Very-low overhead ab initio accelerated dynamics." (9 2006).
  • Pichler, P.; Burenkov, A.; Lerch, W.; Lorenz, J. et al. "Process-induced diffusion phenomena in advanced CMOS technologies." (1 2006).
  • Pichler, P.; Burenkov, A.; Lerch, W.; Lorenz, J. et al. "Process-induced diffusion phenomena in advanced CMOS technologies." (1 2006).
  • Windl, W.; Liang, T.; Lopatin, S.; Duscher, G. "Characterization and modeling of atomically sharp "perfect" Si:Ge/SiO2 interfaces." (12 2006).

2005

  • Ravichandran, K.; Windl, W. "Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (1 0 0)/SiO2 interfaces." (12 2005).
  • Ravichandran, K.; Windl, W. "Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (100)/SiO2 interfaces." (12 2005).
  • Windl, W. "Ab initio assisted process modeling for Si-based nanoelectronic devices." in Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies held at the 2005 EMRS Meeting. (12 2005).
  • Ravichandran, K.; Windl, W. "Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (100)/SiO2 interfaces." in Symposium on Materials Science and Device Issues for Future Si-Based Technologies held at the 2005 EMRS Meeting. (12 2005).
  • Windl, W. "Energetics and kinetics of defects and impurities in silicon from atomistic calculations." in 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2005). (1 2005).
  • Windl, W. "Energetics and kinetics of defects and impurities in silicon from atomistic calculations." (1 2005).
  • Windl, W. "Ab initio assisted process modeling for Si-based nanoelectronic devices." (12 2005).
  • Windl, W. "Energetics and kinetics of defects and impurities in silicon from atomistic calculations." (1 2005).
  • B. Khorsandi, T.E. Blue, J. Kulisek, W. Windl, D. Miller "Production of Vacancies in SiC Detectors after Irradiation with Monoenergetic Neutrons." in Transactions of the ANS 2005 Winter Meeting. (11 2005).
  • Ravichandran,K; Windl,W "Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (100)/SiO2 interfaces." in Symposium on Materials Science and Device Issues for Future Si-Based Technologies held at the 2005 EMRS Meeting. (12 2005).
  • Windl, W. "Ab initio assisted process modeling for Si-based nanoelectronic devices." (12 2005).

2004

  • Windl, W. "Diffusion in silicon and the predictive power of ab-initio calculations." in 5th Motorola Workshop on Computational Materials and Electronics. (8 2004).
  • Windl, W. "Diffusion in silicon and the predictive power of ab-initio calculations." (8 2004).
  • Stoddard, N.G.; Duscher, G.; Windl, W.; Rozgonyi, G.A. "Simulation and electron energy-loss spectroscopy of electron beam induced point defect agglomerations in silicon." (10 2004).
  • Windl,W; Liang,T; Lopatin,S; Duscher,G "Modeling and characterization of atomically sharp "perfect" Ge/SiO2 interfaces." in Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineering held at the E-MRS 2004 Spring Meeting. (12 2004).
  • Stoddard, N.G.; Duscher, G.; Windl, W.; Rozgonyi, G.A. "Simulation and electron energy-loss spectroscopy of electron beam induced point defect agglomerations in silicon." in Symposium on Silicon Front-End Junction Formation-Physics and Technology held at the 2004 MRS Spring Meeting. (1 2004).
  • Windl, W.; Liang, T.; Lopatin, S.; Duscher, G. "Modeling and characterization of atomically sharp "perfect" Ge/SiC2 interfaces." (12 2004).
  • Windl, W. "Diffusion in silicon and the predictive power of ab-initio calculations." (8 2004).
  • Windl, W.; Liang, T.; Lopatin, S.; Duscher, G. "Modeling and characterization of atomically sharp "perfect" Ge/SiO2 interfaces." in Symposium on Material Science Issues in Advanced CMOS Source-Drain Engineeing held at the E-MRS 2004 Spring Meeting. (12 2004).
  • Windl, W.; Liang, T.; Lopatin, S.; Duscher, G. "Modeling and characterization of atomically sharp "perfect" Ge/SiO2 interfaces." (12 2004).
  • Stoddard, N.G.; Duscher, G.; Windl, W.; Rozgonyi, G.A. "Simulation and electron energy-loss spectroscopy of electron beam induced point defect agglomerations in silicon." (1 2004).

2003

  • Windl,W "Multiscale simulation of diffusion, deactivation and segregation of boron in silicon." in International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002). (3 2003).
  • Windl, W. "Multiscale simulation of diffusion, deactivation and segregation of boron in silicon." (3 2003).
  • Lopatin, S.; Duscher, G.; Windl, W. "Atomic resolution Z-contrast imaging and EELS: Application for Ge/SiO 2 interface." (9 2003).
  • Liang, T.; Windl, W.; Lopatin, S.; Duscher, G. "Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces." (1 2003).
  • Liang, T.; Windl, W.; Lopatin, S.; Duscher, G. et al. "Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces." (1 2003).
  • Windl, W.; Liang, T.; Lopatin, S.; Duscher, G. "Atomistic modeling of the detailed structure of Si/SiO2 interfaces using AIDA-TEM (Ab-initio Interface Defect detection by Analytic Transmission Electron Microscopy)." (9 2003).
  • Liang,T; Windl,W; Lopatin,S; Duscher,G "Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces." in IEEE International Conference on Simulation of Semiconductor Processes and Devices. (1 2003).
  • Liang, T.; Windl, W.; Lopatin, S.; Duscher, G. "Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces." in IEEE International Conference on Simulation of Semiconductor Processes and Devices. (1 2003).
  • Windl, W. "Multiscale simulation of diffusion, deactivation and segregation of boron in silicon." in International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002). (3 2003).

2002

  • Beardmore, K.M.; Windl, W.; Haley, B.P.; Gronbech-Jensen, N. "Diffusion mechanisms and capture radii in silicon." in 2nd International Conference on Computational Nanoscience and Nanotechnology. (1 2002).
  • Windl, W.; Daw, M.S. "Predictive process simulation and ab-initio calculation of the physical volume of electrons in silicon." in 2nd International Conference on Computational Nanoscience and Nanotechnology. (1 2002).
  • Windl, W. "Multiscale simulation of diffusion, deactivation, and segregation of dopants - Ab-initio to continuum." in International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002). (1 2002).
  • Windl, W.; Daw, M.S. "Predictive process simulation and ab-initio calculation of the physical volume of electrons in silicon." (12 2002).
  • Beardmore, K.M.; Windl, W.; Haley, B.P.; Grønbech-Jensen, N. "Diffusion mechanisms and capture radii in silicon." (12 2002).
  • Windl, W. "Multiscale simulation of diffusion, deactivation, and segregation of dopants - Ab-initio to continuum." (1 2002).
  • Beardmore, K.M.; Windl, W.; Haley, B.P.; Gronbech-Jensen, N. "Diffusion mechanisms and capture radii in silicon." (1 2002).
  • Windl, W.; Daw, M.S. "Predictive process simulation and ab-initio calculation of the physical volume of electrons in silicon." (12 2002).
  • Liu, X.Y.; Windl, W.; Masquelier, M.P. "Ab-initio pseudopotential calculations of phosphorus diffusion in silicon." in Symposium on Silicon Front-End Junction Formation Technologies held at the MRS Spring Meeting. (1 2002).
  • Windl, W.; Daw, M.S. "Predictive process simulation and ab-initio calculation of the physical volume of electrons in silicon." (1 2002).
  • Beardmore, K.M.; Windl, W.; Haley, B.P.; Grønbech-Jensen, N. "Diffusion mechanisms and capture radii in silicon." (12 2002).
  • Windl, W.; PHYSICS, J.S.O.F.A.; PHYSICS, J.S.O.F.A. "Multiscale simulation of diffusion, deactivation, and segregation of dopants - Ab-initio to continuum." (1 2002).
  • Uberuaga, B.P.; Henkelman, G.; Jónsson, H.; Dunham, S.T. et al. "Theoretical studies of self-diffusion and dopant clustering in semiconductors." (1 2002).
  • Uberuaga, B.P.; Henkelman, G.; Jonsson, H.; Dunham, S.T. et al. "Theoretical studies of self-diffusion and dopant clustering in semiconductors." (9 2002).
  • Liu, X.Y.; Windl, W.; Masquelier, M.P. "Ab-initio pseudopotential calculations of phosphorus diffusion in silicon." (1 2002).
  • Liu, X.Y.; Windl, W.; Masquelier, M.P. "Ab-initio pseudopotential calculations of phosphorus diffusion in silicon." (1 2002).
  • Windl,W; Daw,M,S "Predictive process simulation and ab-initio calculation of the physical volume of electrons in silicon." in 2nd International Conference on Computational Nanoscience and Nanotechnology. (1 2002).
  • Beardmore,K,M; Windl,W; Haley,B,P; Gronbech-Jensen,N "Diffusion mechanisms and capture radii in silicon." in 2nd International Conference on Computational Nanoscience and Nanotechnology. (1 2002).
  • Uberuaga, B.P.; Henkelman, G.; Jonsson, H.; Dunham, S.T. et al. "Theoretical studies of self-diffusion and dopant clustering in semiconductors." in 3rd Motorola Workshop on Computational Materials and Electronics. (9 2002).

2001

  • Uberuaga, B.P.; Henkelman, G.; Jónsson, H.; Dunham, S.T. et al. "Theoretical investigations of diffusion and clustering in semiconductors." (12 2001).
  • Windl, W.; Liu, X.Y.; Masquelier, M.P. "First-principles modeling of boron clustering in silicon." (7 2001).
  • Windl, W.; Daw, M.S.; Carlson, N.N.; Laudon, M. "Multiscale modeling of stress-mediated diffusion in silicon - volume tensors." (12 2001).
  • Windl, W.; Stumpf, R.; Liu, X.Y.; Masquelier, M.P. "Ab initio modeling study of boron diffusion in silicon." (8 2001).
  • Windl, W.; Stumpf, R.; Liu, X.Y.; Masquelier, M.P. "Ab initio modeling study of boron diffusion in silicon." (8 2001).
  • Windl, W.; Liu, X.Y.; Masquelier, M.P. "Ab initio modeling of boron clustering in silicon." (12 2001).
  • Windl, W.; Liu, X.Y.; Masquelier, M.P. "First-principles modeling of boron clustering in silicon." in 2nd Motorola Workshop on Computational Materials and Electronics. (7 2001).
  • Windl, W.; Stumpf, R.; Liu, X.Y.; Masquelier, M.P. "Ab initio modeling study of boron diffusion in silicon." in 2nd International Workshop on Challenges in Predictive Process Simulation (ChiPPS 2000). (8 2001).
  • Windl, W.; Liu, X.Y.; Masquelier, M.P. "First-principles modeling of boron clustering in silicon." (7 2001).
  • Daw, M.S.; Windl, W.; Laudon, M. "General treatment of the effect of stress on defect diffusion in Si." (12 2001).

2000

  • Windl, W.; Laudon, M.; Daw, M.S.; Carlson, N.N. et al. "Multiscale modeling of stress-mediated diffusion in silicon - Ab initio to continuum." (12 2000).
  • Windl, W.; Laudon, M.; Daw, M.S.; Carlson, N.N. et al. "Multiscale Modeling of stress-mediated diffusion in silicon - Ab initio to continuum." in 3rd International Conference on Modeling and Simulation of Microsystems. (1 2000).
  • Windl, W.; Laudon, M.; Daw, M.S.; Carlson, N.N. et al. "Multiscale Modeling of stress-mediated diffusion in silicon - Ab initio to continuum." (1 2000).

1999

  • Windl, W.; Bunea, M.M.; Stumpf, R.; Dunham, S.T. et al. "Ab-initio pseudopotential calculations of boron diffusion in silicon." (1 1999).
  • Windl, W.; Bunea, M.M.; Stumpf, R.; Dunham, S.T. et al. "Ab-initio pseudopotential calculations of boron diffusion in silicon." in Symposium on Si Front-End Processing-Physics and Technology of Dopant-Defect Interactions. (1 1999).
  • Dong, J.J.; Sankey, O.F.; Demkov, A.A.; Ramachandran, G.K. et al. "Theoretical calculation of the vibrational modes in Ge-46 clathrate and related MxGayGe46-y type clathrates." (1 1999).
  • Windl, W.; Bunea, M.M.; Stumpf, R.; Dunham, S.T. et al. "Ab-initio pseudopotential calculations of boron diffusion in silicon." (1 1999).
  • Dong, J.J.; Sankey, O.F.; Demkov, A.A.; Ramachandran, G.K. et al. "Theoretical calculation of the vibrational modes in Ge-46 clathrate and related MxGayGe46-y type clathrates." in Symposium on Thermoelectric Materials 1998 - The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications. (1 1999).
  • Windl, W.; Bunea, M.; Stumpf, R.; Dunham, S.T. et al. "Ab-initio pseudopotential calculations of boron diffusion in silicon." in 2nd International Conference on Modeling and Simulation of Microsystems. (1 1999).
  • Windl, W.; Sankey, O.F. "First-principles investigation of the ordered Si4C compound." in Symposium D on Integration of Dissimilar Materials in Micro- and Optoelectronics / Symposium I on III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications, at the 1998 MRS Fall Meeting. (1 1999).
  • Windl, W.; Bunea, M.; Stumpf, R.; Dunham, S.T. et al. "Ab-initio pseudopotential calculations of boron diffusion in silicon." (1 1999).
  • Windl, W.; Sankey, F. "First-principles investigation of the ordered Si4C compound." (12 1999).
  • Windl, W.; Sankey, O.F. "First-principles investigation of the ordered Si4C compound." (1 1999).

1998

  • Sankey, O.F.; Demkov, A.A.; Windl, W.; Fritsch, J.H. et al. "The application of approximate density functionals to complex systems." (8 1998).
  • Windl, W.; Demkov, A.A. "First-principles study of N impurities in SiC polytypes." (1 1998).
  • Sankey, O.F.; Demkov, A.A.; Windl, W.; Fritsch, J.H. et al. "The application of approximate density functionals to complex systems." in Symposium on Density Functional Theory and Applications. (8 1998).
  • Windl, W.; Demkov, A.A. "First-principles study of N impurities in SiC polytypes." in Symposium on Defect and Impurity Engineered Semiconductors II at the Materials-Research-Society Spring Meeting. (1 1998).
  • Windl, W.; Lenosky, T.J.; Kress, J.D.; Voter, A.F. "First-principles study of point-defect production in Si and SiC." in Symposium on Semiconductor Process and Device Performance Modelling. (1 1998).
  • Sankey, O.F.; Demkov, A.A.; Windl, W.; Fritsch, J.H. et al. "The application of approximate density functionals to complex systems." (1 1998).
  • Windl, W.; Lenosky, T.J.; Kress, J.D.; Voter, A.F. "First-principles study of point-defect production in Si and SiC." (12 1998).
  • Windl, W.; Lenosky, T.J.; Kress, J.D.; Voter, A.F. "First-principles study of point-defect production in Si and SiC." (1 1998).

1997

  • Windl, W.; Kress, J.D.; Voter, A.F.; Menendez, J. et al. "Influence of the local microstructure on the macroscopic properties of Si1-x-yGexCy alloys." (1 1997).
  • Windl, W.; Kress, J.D.; Voter, A.F.; Menendez, J. et al. "Influence of the local microstructure on the macroscopic properties of Si1-x-yGexCy alloys." in Symposium on Defects and Diffusion in Silicon Processing. (1 1997).
  • Windl, W.; Kress, J.D.; Voter, A.F.; Menendez, J. et al. "Influence of the local microstructure on the macroscopic properties of Si1-x-yGexCy alloys." (12 1997).
  • Windl,W; Kress,J,D; Voter,A,F; Menendez,J; Sankey,O,F "Influence of the local microstructure on the macroscopic properties of Si1-x-yGexCy alloys." in Symposium on Defects and Diffusion in Silicon Processing. (1 1997).

1996

  • Strauch, D.; Windl, W.; Sterner, H.; Pavone, P. et al. "Full ab initio calculation of second-order infrared and Raman spectra of elemental semiconductors." (4 1996).
  • Strauch, D.; Pavone, P.; Nerb, N.; Karch, K. et al. "Atomic thermal vibrations in semiconductors: Ab initio calculations and EXAFS measurements." (4 1996).
  • Strauch, D.; Pavone, P.; Nerb, N.; Karch, K. et al. "Atomic thermal vibrations in semiconductors: Ab initio calculations and EXAFS measurements." in 4th International Conference on Phonon Physics/8th International Conference on Phonon Scattering in Condensed Matter (PHONONS 95). (4 1996).
  • Strauch, D.; Windl, W.; Sterner, H.; Pavone, P. et al. "Full ab initio calculation of second-order infrared and Raman spectra of elemental semiconductors." in 4th International Conference on Phonon Physics/8th International Conference on Phonon Scattering in Condensed Matter (PHONONS 95). (4 1996).
  • Strauch, D.; Pavone, P.; Nerb, N.; Karch, K. et al. "Atomic thermal vibrations in semiconductors: Ab initio calculations and EXAFS measurements." (4 1996).
  • Strauch, D.; Windl, W.; Sterner, H.; Pavone, P. et al. "Full ab initio calculation of second-order infrared and Raman spectra of elemental semiconductors." (4 1996).