MSE Colloquium: Jennifer L. M. Rupp, Let's Design the Structural-Defect Twists in Solid State Materials: Strained Architectures for Novel Electronics and Energy Conversion Devices

Electrochemical Materials, ETH Zurich, Switzerland

All dates for this event occur in the past.

264 MacQuigg Labs
105 W. Woodruff Ave.
Columbus, OH 43210
United States

Abstract

The next generation of energy conversion and storage devices, information memories and neuromorphic computer logics in electronics rely largely on solving fundamental questions of mass and charge transport of oxygen ionic defects in materials and their structures. Here, understanding the defect kinetics in the solid state material building blocks and their interfaces with respect to lattice and interfacial strains are the prerequisite to design new material properties beyond classic doping. Through this presentation basic theory and model experiments for solid state electro-chemo-mechanics and lattice strain modulations is being discussed as a new route for tuning material and properties in ionic conducting oxide film structures up to new device prototypes. Central are the making and manipulation of the mechanics in solid state ionic conducting heterostructures, in-situ spectroscopic and microscopic techniques coupled with electrochemical micro-measurements to probe near order structural bond strength changes relative to ionic and electronic diffusion kinetics and the materials integration to new optimized device architectures and operation schemes.

 

We will discuss basic fundamentals of oxygen ionic transport under strain for heterostructures and exemplify their impact on novel classes of electrochemical devices such as for energy harvesting: "Micro-Energy Conversion Membranes under Tuned Strain Fields", and for innovative types of ionically-operated data storage and logics: "Strained Memristor micro-Dots for Information Storage" or "Oxygen-Ionic Controlled Non-Binary Transfer Logics to replace Electronically Operated Transistors".

Bio

Born in Germany in 1980, Jennifer Rupp studied at the University of Vienna in Austria mineralogy and crystallography and received her PhD in material science at the ETH Zurich in Switzerland in the group of Prof. L.J. Gauckler. From 2007 until end of 2010 she was group leader and senior scientist in the same electroceramics group. During this period in Zurich, she worked on ionic transport-structure relations and crystallization kinetics for solid state ionic conductor thin films, micro-solid oxide fuel cells their microfabrication, electrochemistry and system aspects. In 2011 she was for a short period researcher at the National Institute of Materials Science (NIMS) in Tsukuba Japan working on oxide memristors for information storage, strain-charge transport interaction in mixed ionic electronic conductors and protonic fuel cells and materials. From spring 2011 to mid 2012 she joined the Massachusetts Institute of Technology (MIT) USA where she was affiliated and working in two groups, namely with Prof. H. Tuller in the Crystal Physics and Electroceramics laboratory (Dept. of Materials) on resistive memories and with Prof. B. Yildiz on the connection of DFT computation to experiments on strain-charge transport interaction in solid electrolytes at the Laboratory for Electrochemical Interfaces (Dept. of Nuclear Science).

She holds the Swiss National Science Foundation (SNF) professorship (non tenure-track) entitled “redox-based resistance switching memories” (2012-2016), is a guest associate professor at Kyushu University Japan (2011-open) and the International Institute for Carbon-Neutral Energy Research (I2CNER) Japan (2013-open), is an elected member of the European Academy of Science for Chemistry (2012-2015) and on the editorial board of the Journal of Electroceramics, Springer.

Recently, she accepted the nomination and mandat by the Swiss Federal Department of Environment, Transport, Energy and Communication to serve as a member on the new Swiss Energy Technology-fund board on invitation by Federal Councillor Doris Leuthard starting in 2015. Awards include the recent nomination as one of the top 40 international scientists under the age of 40 to speak at the World Economic Forum (WEF) in China on new innovative Materials and Devices for Global Energy Challenges in 2014, the Spark Award by ETH Zurich for the most innovative and economically important invention of the year for a new memristor information storage concept in 2014, Kepler award “new materials in energy technology” by the European Academy of Science, 1st prize Young Scientist Awards by the International Solid State Ionics Society, ETH Zurich`s Medal for PhD excellence, 1st prize Austrian Chemical Society award for her diploma thesis.

Her main research interests are on materials development and structure-transport relations for information memory storage, microsystems and energy conversion and storage systems. This includes new device design concepts and performance testing.

 

 

  1. The Effect of Mechanical Twisting on Oxygen Ionic Transport in Solid State Energy Conversion Membranes
    Y. Shi, A.H. Bork, S. Schweiger and J.L.M. Rupp
    Nature Materials, accepted  (2015)
  2. A Micro-Dot Multilayer Oxide Device: Let’s Tune the Strain-Ionic Transport Interaction
    S. Schweiger, M. Kubicek, F. Messerschmitt, C. Murer and J.L.M. Rupp
    ACS Nano, 8, 5, 5032 (2014)
  3. Memristor Kinetics and Diffusion Characteristics for Mixed Anionic-Electronic SrTiO3-δ: The Memristor-based Cottrell Analysis Connecting Material to Device Performance
    F. Messerschmitt, M. Kubicek, S. Schweiger and J.L.M. Rupp
    Advanced Functional Materials, 24, 47, 7448 (2014)
  4. Patent Application PCT/EP2014/001020: "Strained Multilayer Resistive-switching Memory Elements" (2014)
    J.L.M. Rupp, S. Schweiger, F. Messerschmitt
    Spark award winner: most inventive and economically important patent of the year at ETH Zurich