MSE Seminar: Jing Yang
All dates for this event occur in the past.
Watts 184
2041 College Rd.
Columbus, OH 43210
United States
Abstract
Superlattice structures formed using the III-nitrides family of semiconductors have attracted a great deal of attention due to some unique properties. Within the III-nitrides, the large conduction band offset between GaN/AlN and InN/AlN provides very large electron confinement that could be useful for ultrafast intersubband–based photonics. Second, the large spontaneous polarization difference at any nitrides heterostructure interface coupled with the large lattice mismatch (3%-13%), shows the potential for polarization-driven applications. Finally, the epitaxial integration of rare earth pnictides (RE-Pn), such as ErAs and ErSb, in III-As semiconductors has been intensively studied due to the applications in novel high speed photodetectors and photoconductive switches. They motivate the parallel work of embedding GdN in a GaN matrix such as a superlattice structure. In this talk, she will illustrate growth and structure characterizations of GaN/AlN, GdN/GaN and InN/AlN superlattice.
Bio
Jing Yang received her Bachelor degree in Optical Science and Engineering from Fudan University, Shanghai, China in 2008. During her undergraduate study, she conducted the research project on the 3-D structure Nanowire based on anodic alumina oxide (AAO) template and was named as Chun-Tsung Scholar (Jun. 2008) which is funded by Tsung-Dao Lee, a Chinese-American Nobel Laureate, supervised by the United Board for Christian Higher Education in Asia. After brief graduate study in Purdue University (2008), she joined OSU MSE department in the winter of 2009 and became the first graduate student of Dr. Roberto Myers’ group. For the last four and half year, her research was focused on Molecular Beam Epitaxy growth of heterostructures in nitrides. She received her Master degree in 2013. In her spare time, she likes to sing musicals, dance, play tennis and has become minion-maniac lately.