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College of Engineering

Department of Materials Science and Engineering

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Wolfgang Windl

ProfessorMaterials Science Engineering

491 Watts Hall
2041 College Rd
Columbus, OH 43210

614-247-6900

Research Area:
Computational modeling, Electronic, optical, and magnetic materials , Energy applications, Sensors

Honors

2012

  • College of Engineering Lumley Research Award, College of Engineering

2006

  • Fraunhofer-Bessel Research Award
  • Mars Fontana Teaching Award, Dept. of Materials Science and Engineering

2004

  • Nano Technology Industrial Impact Award

Chapters in Books

2008

  • Gupta, N.; Windl, W., In Doping Engineering for Front-End Processing. Symposium. Materials Research Society. 2008.
  • Santos, I.; Windl, W.; Pelaz, L.; Marques, L. A., In Doping Engineering for Front-End Processing. Symposium. Materials Research Society. 2008.
  • Windl, W., In Doping Engineering for Front-End Processing. Symposium. Materials Research Society. 2008.

2007

  • Biggerstaff, T. L.; McClellan, R. D.; Lelis, A.; Zheleva, T.; Haney, S.; Agarwal, A.; Windl, W.; Sanwu Wang; Duscher, G., In International Semiconductor Device Research Symposium. IEEE. 2007.
  • Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Lirong Pei; Duscher, G.; Windl, W., In ESSDERC 2007. Proceedings of the 37th European Solid-State Device Research Conference. IEEE. 2007.
  • Steen, C.; Pichler, P.; Ryssel, H.; Lirong Pei; Duscher, G.; Werner, M.; van den Berg, J. A.; Windl, W., In Semiconductor Defect Engineering - Materials, Synthetic Structures and Devices II. Materials Research Society. 2007.

2006

  • Windl, W.; Khorsandi, B.; Weiqi Luo; Blue, T. E., In Materials in Extreme Environments. Symposium (Materials Research Society Symposium Proceedings Vol.929). Materials Research Society. 2006.

2004

  • Stoddard, N. G.; Duscher, G.; Windl, W.; Rozgonyi, G. A., In Silicon Front-End Junction Formation-Physics and Technology (Materials Research Society Symposium Proceedings Vol.810). Materials Research Society. 2004.

2003

  • Tao Liang; Windl, W.; Lopatin, S.; Duscher, G., In 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (Cat. No.03TH8679). IEEE. 2003.

2002

  • Windl, W., In 2002 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2002 (IEEE Cat. No.02TH8621). Japan Soc. Appl. Phys. 2002.

2001

  • Chun-Li Liu; Windl, W.; Borucki, L.; Shifeng Lu; Xiang-Yang Liu, In Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions III. Symposium (Materials Research Society Proceedings Vol.669). Mater. Res. Soc. 2001.
  • Windl, W.; Daw, M. S.; Carlson, N. N.; Laudon, M., In Advances in Materials Theory and Modeling - Bridging Over Multiple-Length and Time Scales. Symposium (Materials Research Society Symposium Proceedings Vol.677). Mater. Res. Soc. 2001.

1999

  • Jianjun Dong; Sankey, O. F.; Demkov, A. A.; Ramachandran, G. K.; Gryko, J.; McMillan, P.; Windl, W., In Thermoelectric Materials 1998 - Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications. Symposium. Mater. Res. Soc. 1999.
  • Windl, W.; Bunea, M. M.; Stumpf, R.; Dunham, S. T.; Masquelier, M. P., In Si Font-End Processing - Physics and Technology of Dopant-Defect Interactions. Symposium. Mater. Res. Soc. 1999.
  • Windl, W.; Sankey, O. F., In III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics. Symposium. Materials Res. Soc. 1999.
  • Windl, W.; Bunea, M.; Stumpf, R.; Dunham, S. T.; Masquelier, M. P., In 1999 International Conference on Modeling and Simulation of Microsystems. Computational Publications. 1999.

1998

  • Windl, W.; Lenosky, T. J.; Kress, J. D.; Voter, A. F., In Semiconductor Process and Device Performance Modelling. Symposium. Mater. Res. Soc. 1998.
  • Windl, W.; Demkov, A. A., In Defect and Impurity Engineered Semiconductors II. Symposium. Mater. Res. Soc. 1998.

1997

  • Windl, W.; Kress, J. D.; Voter, A. F.; Menendez, J.; Sankey, O. F., In Defects and Diffusion in Silicon Processing. Symposium. Mater. Res. Soc. 1997.

1996

  • Karch, K.; Mayer, A. P.; Dietrich, T.; Lang, G.; Windl, W.; Pavone, P.; Strauch, D.; Bechstedt, F., In 23rd International Conference on the Physics of Semiconductors. World Scientific. 1996.


Journal Articles

2011

  • Drabold,David; Demkov,Alex; Lewis,James,P; Ortega,Jose; Windl,Wolfgang; Lindsay,Stuart, "Dedication." PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 248 9 1987-1988
  • Mishra, R; Restrepo, OD; Rajan, S; Windl, W, "First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures." APPLIED PHYSICS LETTERS 98 23

2010

  • Santos, I; Castrillo, P; Windl, W; Drabold, DA; Pelaz, L; Marques, LA, "Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency." PHYSICAL REVIEW B 81 3
  • Mishra, R; Restrepo, OD; Woodward, PM; Windl, W, "First-Principles Study of Defective and Nonstoichiometric Sr2FeMoO6." CHEMISTRY OF MATERIALS 22 22 6092-6102

2009

  • Luo, WQ; Windl, W, "First principles study of the structure and stability of carbynes." CARBON 47 2 367-383
  • Li, DS; Windl, W; Padture, NP, "Toward Site-Specific Stamping of Graphene." ADVANCED MATERIALS 21 12 1243-+
  • Li,Dongsheng; Windl,Wolfgong; Padture,Nitin,P, "Toward Site-Specific Stamping of Graphene." ADVANCED MATERIALS 21 12 1243-?
  • Wagner,Martin,FX; Windl,Wolfgang, "Elastic anisotropy of Ni4Ti3 from first principles." SCRIPTA MATERIALIA 60 4 207-210

2008

  • Cristianoa,Fuccio; Lauwers,Anne; Pichler,Peter; Feudel,Thomas; Windil,Wolfgang, "Special Issue: Front-End junction and Contact Formation in Future Silicon/Germanium Based Devices Preface." MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS 154 1-2
  • Windl,Wolfgang, "Concentration dependence of self-interstitial and boron diffusion in silicon." APPLIED PHYSICS LETTERS 92 20

2007

  • Kim,Hansung; Windl,Wolfgang, "Efficient ab-initio calculation of the elastic properties of nanocrystalline silicon." JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE 4 1 65-70

2005

  • Ravichandran,K; Windl,W, "Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si(100)/SiO2 interfaces." APPLIED PHYSICS LETTERS 86 15

2002

  • Liu,C,L; Windl,W; Borucki,L; Lu,S,F; Liu,X,Y, "Ab initio modeling and experimental study of C-B interactions in Si." APPLIED PHYSICS LETTERS 80 1 52-54

2001

  • Daw,M,S; Windl,W; Carlson,N,N; Laudon,M; Masquelier,M,P, "Effect of stress on dopant and defect diffusion in Si: A general treatment." PHYSICAL REVIEW B 64 4
  • Windl,W; Laudon,M; Carlson,N,N; Daw,M,S, "Predictive process simulation and stress-mediated diffusion in silicon." COMPUTING IN SCIENCE & ENGINEERING 3 4 92-95

2000

  • Liu,X,Y; Windl,W; Masquelier,M,P, "Ab initio modeling of boron clustering in silicon (vol 77, pg 2018, 2000)." APPLIED PHYSICS LETTERS 77 24 4064-4064
  • Liu,X,Y; Windl,W; Masquelier,M,P, "Ab initio modeling of boron clustering in silicon." APPLIED PHYSICS LETTERS 77 13 2018-2020

1999

  • Windl,W; Bunea,M,M; Stumpf,R; Dunham,S,T; Masquelier,M,P, "First-principles study of boron diffusion in silicon." PHYSICAL REVIEW LETTERS 83 21 4345-4348

1996

  • Melendez-Lira, M.; Menendez, J.; Windl, W.; Sankey, O. F.; Spencer, G. S.; Sego, S.; Culbertson, R. B.; Bair, A. E.; Alford, T. L., "Carbon dependence of Raman mode frequencies in Si1-x-yGexCy alloys." Physical Review B (Condensed Matter) 54 18 12866-72

1995

  • Bauer,R; Schutt,O; Pavone,P; Windl,W; Strauch,D, "STATIC AND DYNAMICAL PROPERTIES OF SOLID CHLORINE." PHYSICAL REVIEW B 51 1 210-213

1994

  • Karch,K; Pavone,P; Windl,W; Schutt,O; Strauch,D, "AB-INITIO CALCULATION OF STRUCTURAL AND LATTICE-DYNAMICAL PROPERTIES OF SILICON-CARBIDE." PHYSICAL REVIEW B 50 23 17054-17063
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